DatasheetsPDF.com

D1140

Part Number	D1140
Manufacturer	Toshiba Semiconductor
Description	2SD1140
Published	Dec 24, 2005
Detailed Description	2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor D...
Datasheet	D1140 PDF File

Overview

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.
5 50 900 150 −55 to 150 Unit V V V A mA mW °C °C Equivalent Circ...

Similar Datasheet

D110277 (D1102xx) D-Subminiature Accessories - ITT
D110278 (D1102xx) D-Subminiature Accessories - ITT
D110279 (D1102xx) D-Subminiature Accessories - ITT
D110280 (D1102xx) D-Subminiature Accessories - ITT
D1106 System Board - Fujitsu
D111 Silicon NPN Power Transistor - INCHANGE
D1111 2SD1111 - Sanyo Semicon Device
D1113 2SD1113 - Hitachi Semiconductor
D1115 2SD1115 - Hitachi Semiconductor
D1117 1A LOW DROPOUT LINEAR REGULATOR - YANGJING MICROELECTRONICS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)