FLM8596-8F
X, Ku-Band Internally Matched FET FEATURES
High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM8596-8F is a power GaAs FET that is internally matched for stand...
