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FLM3135-4F

ETC
Part Number FLM3135-4F
Manufacturer ETC
Description C-Band Internally Matched FET
Published Dec 29, 2005
Detailed Description FLM3135-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB...
Datasheet PDF File FLM3135-4F PDF File

FLM3135-4F
FLM3135-4F

Overview
FLM3135-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.
5dBm (Typ.
) High Gain: G1dB = 12.
0dB (Typ.
) High PAE: ηadd = 38% (Typ.
) Low IM3 = -45dBc@Po = 25.
5dBm Broad Band: 3.
1 ~ 3.
5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM3135-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel ...


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