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IRL3705N

International Rectifier
Part Number IRL3705N
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 3, 2006
Detailed Description  Logic - Level Gate Drive  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Swi...
Datasheet PDF File IRL3705N PDF File

IRL3705N
IRL3705N

Overview
 Logic - Level Gate Drive  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.
D G S IRL3705NPbF HEXFET® Power MOSFET VDSS RDS(on) max.
ID 55V 0.
01 89A G Gate GDS TO-220AB IRL3705NPbF D Drain S Source Base part number IRL3705NPbF Package Type TO-220 Standard Pack Fo...


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