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K3407

Toshiba
Part Number K3407
Manufacturer Toshiba
Description 2SK3407
Published Feb 8, 2006
Detailed Description www.DataSheet4U.com 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regu...
Datasheet PDF File K3407 PDF File

K3407
K3407

Overview
www.
DataSheet4U.
com 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.
4~3.
4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.
9 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resi...


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