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MRF9030MBR1

Part Number	MRF9030MBR1
Manufacturer	Freescale Semiconductor
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Feb 8, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Mic...
Datasheet	MRF9030MBR1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — -31 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Out...

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MRF9030MBR1 RF Power Field Effect Transistors - Freescale Semiconductor
MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS - Freescale Semiconductor

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