DatasheetsPDF.com

STU1224N

SamHop Microelectronics
Part Number STU1224N
Manufacturer SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Published Feb 10, 2006
Detailed Description S amHop Microelectronics C orp. N-C hannel S Eh nhancement Mode Field E ffect Trans is tor t e e 4U m o .c S T U/D1...
Datasheet PDF File STU1224N PDF File

STU1224N
STU1224N

Overview
S amHop Microelectronics C orp.
N-C hannel S Eh nhancement Mode Field E ffect Trans is tor t e e 4U m o .
c S T U/D1224N Dec 20,2004 a t a P R ODUC T S UMMAR Y D .
V w I R w w DS S D F E AT UR E S DS (ON) ( m £[ ) Max S uper high dense cell design for low R DS (ON ).
80 @ V G S = 4.
5V R ugged and reliable.
24V 12A 130 @ V G S = 2.
5V TO-252 and TO-251 P ackage.
D G S G D S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange w w w .
D t a S a (T A =25 C unles s otherwis e noted) Limit 24 12 12 25 10 50 -55 to 150 Unit V V A A A e h V DS V GS ID IDM IS PD t e G U 4 .
c D S m o S ymbol T J , T S TG THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA w w w .
D at 3 h S a t e e W U 4 .
m o c C C /W C /W 50 S T U/D1224N E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 18V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS =4.
5V, ID = 6.
0A V GS =2.
5V, ID = 5.
2A V DS = 5V, V GS = 4.
5V V DS = 10V, ID = 6.
0A Min Typ C Max Unit 24 1 100 0.
7 1.
2 60 90 15 10 528 139 107 1.
8 80 130 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =8V, V GS = 0V f =1.
0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)