5V 256K x 16 CMOS DRAM
Description
AS4C256K16E0
®
5V 256K×16 CMOS DRAM (EDO) Features
Organization: 262,144 words × 16 bits High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time Low power consumption - Active: 500 mW max (AS4C256K16E0-25) - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25) EDO page mode Refresh - 512 refresh...
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