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2N5583

Advanced Semiconductor
Part Number 2N5583
Manufacturer Advanced Semiconductor
Description PNP Silicon High Frequency Transistor
Published Mar 13, 2006
Detailed Description 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non ...
Datasheet PDF File 2N5583 PDF File

2N5583
2N5583

Overview
2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.
PACKAGE STYLE MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.
0 W @ TA = 25 °C 5.
0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(SAT) VBE(ON) ft Ccb Ceb rb'Cc td tr tf IC = 10 mA IC = 10 µA TC = 25 °C TEST CONDITIONS IC = 100 µA VCB = -20 V VEB = -2.
0 V VCE = -2.
0 V VCE = -5.
0 V IC = 100 mA VCE = -2.
0 V VCE = -10 V VCB = -15 V VEB = -0.
5 V VCB = -10 V VCC = -31.
4 V RC = 160 Ω w w .
D w IC = 40 mA IC = 100 mA IC = 300 mA IB = 10 mA IC = 100 mA IC = 40 mA...


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