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RD07MVS1

Mitsubishi Electric
Part Number RD07MVS1
Manufacturer Mitsubishi Electric
Description Silicon MOSFET Power Transistor
Published Mar 18, 2006
Detailed Description MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Sil...
Datasheet PDF File RD07MVS1 PDF File

RD07MVS1
RD07MVS1

Overview
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.
2+/-0.
05 (0.
22) Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
OUTLINE DRAWING 6.
0+/-0.
15 4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05 1 4.
9+/-0.
15 1.
0+/-0.
05 •High power gain: Pout>7W, Gp>10dB@Vdd=7.
2V,f=520MHz •High Efficiency: 60%typ.
(175MHz) •High Efficiency: 55%typ.
(520MHz) 2 APPLICATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
INDEX MARK (Gate) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tj Tstg ...


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