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STE40NC60

Part Number	STE40NC60
Manufacturer	ST Microelectronics
Description	N-CHANNEL Power MOSFET
Published	Mar 22, 2006
Detailed Description	N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh™ II MOSFET TYPE STE40NC60 n n n n n STE40NC60 VDSS 600V RDS(on) < 0.13...
Datasheet	STE40NC60 PDF File

Overview

N-CHANNEL 600V - 0.
098Ω - 40A ISOTOP PowerMesh™ II MOSFET TYPE STE40NC60 n n n n n STE40NC60 VDSS 600V RDS(on) < 0.
13Ω ID 40 A TYPICAL RDS(on) = 0.
098 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l ) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (...

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STE40NC60 N-CHANNEL Power MOSFET - ST Microelectronics

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