512M-Bit CMOS NAND EPROM
Description
TC58DVM92A1FTI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M u 8 BITS) CMOS NAND E PROM DESCRIPTION
The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register which allow...
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