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MB84VD2008

Fujitsu Media Devices
Part Number MB84VD2008
Manufacturer Fujitsu Media Devices
Description (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
Published Apr 12, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP (Multi-Chip Package) FLASH MEM...
Datasheet PDF File MB84VD2008 PDF File

MB84VD2008
MB84VD2008

Overview
( DataSheet : www.
DataSheet4U.
com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 s FEATURES • Power supply voltage of 2.
7 to 3.
6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Simultaneous operations Read-while Erase or Read-while-Program • Minimum 100,000 write/erase cycles • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.
Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• Boot Code Sector Architecture MB84VD2008: Top sector MB84VD2009: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit ≤ 2.
5 V • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device • Please refer to "MBM29DL800TA/BA" data sheet in detailed function — SRAM • Power dissipation Operating : 50 mA max.
Standby : 50 µA max.
• Data retention supply voltage: 2.
0 V to 3.
6 V Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
www.
DataSheet4U.
com www.
DataSheet4U.
com MB84VD2008-10/MB84VD2009-10 s BLOCK DIAGRAM VCCf A0 to A18 A0 to A18 8 M bit Flash Memory VSS RY/BY RESET CEf DQ0 to DQ15 VCCs A0 to A16 VSS LBs UBs WE OE CEs 2 M bit Static RAM 2 MB84VD2008-10/MB84VD2009-10 s PIN ASSIGNMENTS (Top View) A 6 5 4 3 2 1 CEs A10 OE A11 A13 WE B VSS DQ5 DQ7 A8 A17 VCCs C DQ1 DQ2 DQ4 A5 UBs A16 D A1 A0 DQ...


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