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JS28F128J3A

Intel Corporation
Part Number JS28F128J3A
Manufacturer Intel Corporation
Description Intel StrataFlash Memory
Published May 9, 2006
Detailed Description ( DataSheet : www.DataSheet4U.com ) Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features ■ ■ ...
Datasheet PDF File JS28F128J3A PDF File

JS28F128J3A
JS28F128J3A

Overview
( DataSheet : www.
DataSheet4U.
com ) Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features ■ ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads (256Mbit density only) — 32-Byte Write Buffer —6.
8 µs per byte effective programming time Software — Program and Erase suspend support — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible Security — 128-bit Protection Register —64-bit Unique Device Identifier —64-bit User Programmable OTP Cells — Absolute Protection with VPEN = GND — Individual Block Locking — Block Erase/Program Lockout during Power Transitions ■ ■ ■ Architecture — Multi-Level Cell Technology: High Density at Low Cost — High-Density Symmetrical 128-Kbyte Blocks —256 Mbit (256 Blocks) (0.
18µm only) —128 Mbit (128 Blocks) —64 Mbit (64 Blocks) —32 Mbit (32 Blocks) Quality and Reliability — Operating Temperature: -40 °C to +85 °C — 100K Minimum Erase Cycles per Block — 0.
18 µm ETOX™ VII Process (J3C) — 0.
25 µm ETOX™ VI Process (J3A) Packaging and Voltage — 56-Lead TSOP Package — 64-Ball Intel® Easy BGA Package — Lead-free packages available — 48-Ball Intel® VF BGA Package (32 and 64 Mbit) (x16 only) — VCC = 2.
7 V to 3.
6 V — VCCQ = 2.
7 V to 3.
6 V Capitalizing on Intel’s 0.
25 and 0.
18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3) device provides 2X the bits in 1X the space, with new features for mainstream performance.
Offered in 256Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bitper-cell storage technology to the flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device ...


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