DatasheetsPDF.com

BCU83D

Magnatec
Part Number BCU83D
Manufacturer Magnatec
Description NPN Epitaxial Planar Silicon Transistor
Published May 27, 2006
Detailed Description www.DataSheet4U.com BCU83D MECHANICAL DATA Dimensions in mm 6 .2 5 .0 1 .5 1 .5 1 .0 0 .5 0 .7 NPN EPITAXIAL PLANAR S...
Datasheet PDF File BCU83D PDF File

BCU83D
BCU83D

Overview
www.
DataSheet4U.
com BCU83D MECHANICAL DATA Dimensions in mm 6 .
2 5 .
0 1 .
5 1 .
5 1 .
0 0 .
5 0 .
7 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal For High current Switching Application 5 6 4 .
2 5 .
9 FEATURES • LOW VCE(SAT) 2 .
4 4 3 2 1 0 .
4 0 .
8 2 .
4 0 .
8 2 .
4 1 .
0 0 .
4 1 .
8 • HIGH CURRENT CAPACITY • FAST SWITCHING SPEED 1 : 2 : 3 : 4 : 5 : 6 : B a s e 1 E m itte r E m itte r B a s e 2 C o lle c to C o lle c to 1 2 r 2 r 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP IB PC PT Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (750mm2 x 0.
8mm) Total Dissipation (Mounted on Ceramic Board (750mm2 x 0.
8mm) 60V 20V 6V 5A 8A 1A 1.
5W 2W 150°C –55 to 150°C Prelim.
6/99 Tj www.
DataSheet4U.
com Junction Temperature Tstg Storage Temperature Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail: magnatec@semelab.
co.
uk Website: http://www.
semelab.
co.
uk w w w .
D a t a S h e e t 4 U .
c o m BCU83D DYNAMICS CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO Collector – Emitter Base Breakdown Voltage Collector – Base Breakdown Voltage V(BR)EBO ICBO IEBO hFE1* hFE2* hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Emitter Base Breakdown Voltage Collector Cut–Off Current Emitter Cut–Off Current DC Current Gain DC Current Gain Collector – Emitter SaturationVoltage Base – Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn – On Time Storage Time Fall Time Test Conditions IC = 1mA IC = 10mA IE = – 10mA VCB = 50V VEB = 5V VCE = 2V VCE = 2V RBE = 00 IE = 0 IC = 0 IE = 0 IC = 0 IC = 500mA IC = 3A IC = 500mA IB = 60mA IB = 60mA IC = 500mA f = 1MHz Min.
20 60 6 Typ.
Max.
Unit.
V V V 100 100 160 95 0.
8 220 1 220 45 30 300 40 1 500 1.
5 560 nA –— DC Current Gain Ratio (small/large) VCE = 2V IC = 3A IC = 3A VCE = 10V VCB = 10V mV V MHz pF ns Se...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)