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IRL2310

International Rectifier
Part Number IRL2310
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 20, 2006
Detailed Description www.DataSheet4U.com PD - 9.1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Re...
Datasheet PDF File IRL2310 PDF File

IRL2310
IRL2310

Overview
www.
DataSheet4U.
com PD - 9.
1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.
5V & 10V 175°C Operating Temperature Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application.
The TO-220 package is universally pre...


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