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IRLZ34N

NXP
Part Number IRLZ34N
Manufacturer NXP
Description N-Channel MOSFET
Published Jun 20, 2006
Detailed Description www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM t...
Datasheet PDF File IRLZ34N PDF File

IRLZ34N
IRLZ34N

Overview
www.
DataSheet4U.
com Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in switched mode power supplies and general purpose switching applications.
IRLZ34N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 30 68 175 35 ...


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