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IRLZ34NL

International Rectifier
Part Number IRLZ34NL
Manufacturer International Rectifier
Description N-Channel MOSFET
Published Jun 20, 2006
Detailed Description l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34N...
Datasheet PDF File IRLZ34NL PDF File

IRLZ34NL
IRLZ34NL

Overview
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for low- profile applications.
Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** PD - 91308A IRLZ34NS/L HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.
035Ω ID = 30A S D 2 Pak T O -26 2 Max.
30 21 110 3.
8 68 0.
45 ±16 110 16 6.
8 5.
0 -55 to + 175 300 (1.
6mm from case ) Typ.
––– ––– Max.
2.
2 40 Units A W W W/°C V mJ A mJ V/ns °C Units °C/W 5/12/98 IRLZ34NS/L Electrical...


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