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STP6N25 STP6N25FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE STP6N25 STP6N25FI
s s s s s
V DSS 250 V 250 V
R DS( on) < 1Ω < 1Ω
ID 6A 4A
TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
1 2
3
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