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H2N6718V

Hi-Sincerity Mocroelectronics
Part Number H2N6718V
Manufacturer Hi-Sincerity Mocroelectronics
Description NPN Transistor
Published Mar 22, 2005
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6616 Issued Date : 1993.09.2...
Datasheet PDF File H2N6718V PDF File

H2N6718V
H2N6718V

Overview
HI-SINCERITY MICROELECTRONICS CORP.
H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6616 Issued Date : 1993.
09.
24 Revised Date : 2006.
02.
20 Page No.
: 1/5 Description The H2N6718V is designed for general purpose medium power amplifier and switching.
Absolute Maximum Ratings TO-126ML • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.
6 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage.
100 V BVCEO Collector to Emitter Voltage.
.
.
100 V BVEBO Emitter to Base Voltage.
.
.
5 V IC Collector Current .
.
.
1 A Electrical Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min.
Typ.
Max.
100 - - 100 - - 5- - - - 100 - - 350 80 - - 50 - 250 20 - - 50 - - - - 20 Unit V V V nA mV MHz pF Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=80V, IE=0 IC=350mA, IB=35mA IC=50mA, VCE=1V IC=250mA, VCE=1V IC=500mA, VCE=1V VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% H2N6718V HSMC Product Specification HI-SINCE...


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