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TC74AC521F

Toshiba Semiconductor
Part Number TC74AC521F
Manufacturer Toshiba Semiconductor
Description 8-Bit Equality Comparator
Published Aug 25, 2006
Detailed Description TC74AC521P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC521P, TC74AC521F 8-Bit Equality Comparato...
Datasheet PDF File TC74AC521F PDF File

TC74AC521F
TC74AC521F

Overview
TC74AC521P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC521P, TC74AC521F 8-Bit Equality Comparator The TC74AC521 is an advanced high speed CMOS 8-BIT DIGITAL COMPARATOR fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
It compares two 8-bit binary or BCD words applied inputs P0 thru P7, and inputs Q0 thru Q7, and indicates whether or not they are equal.
A signal active low enable is provided to facilitate cascading of several packages to compare of words greater than 8 bits.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 6.
4 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.
5 V • Pin and function compatible with 74F521 Pin Assignment TC74AC521P TC74AC521F Weight DIP20-P-300-2.
54A SOP20-P-300-1.
27A : 1.
30 g (typ.
) : 0.
22 g (typ.
) Start of commercial production 1989-11 1 2014-03-01 IEC Logic Symbol Truth Table Inputs P, Q G P=Q L P≠Q L X H Output P=Q L H H X: Don’t care System Diagram TC74AC521P/F 2 2014-03-01 Absolute Maximum Ratings (Note 1) TC74AC521P/F Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even br...


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