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TC74AC32P

Toshiba Semiconductor
Part Number TC74AC32P
Manufacturer Toshiba Semiconductor
Description Quad 2-Input OR Gate
Published Aug 25, 2006
Detailed Description TC74AC32P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC32P, TC74AC32F, TC74AC32FT Quad 2-Input ...
Datasheet PDF File TC74AC32P PDF File

TC74AC32P
TC74AC32P

Overview
TC74AC32P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC32P, TC74AC32F, TC74AC32FT Quad 2-Input OR Gate The TC74AC32 is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 4.
1 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.
5 V • Pin and function compatible with 74F32 TC74AC32P TC74AC32F TC74AC32FT Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A TSSOP14-P-0044-0.
65A : 0.
96 g (typ.
) : 0.
18 g (typ.
) : 0.
06 g (typ.
) Start of commercial production 1987-05 1 2014-03-01 Pin Assignment TC74AC32P/F/FT IEC Logic Symbol 1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7 (top view) Truth Table A B Y H H H L H H H L H L L L 14 VCC 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y 1A (1) >1 1B (2) 2A (4) 2B (5) 3A (9) 3B (10) 4A (12) 4B (13) (3) 1Y (6) 2Y (8) 3Y (11) 4Y Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW −65 to 150 °C Note 1: Exceeding any of the...


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