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TC74ACT02P

Toshiba Semiconductor
Part Number TC74ACT02P
Manufacturer Toshiba Semiconductor
Description Quad 2-Input NOR Gate
Published Aug 25, 2006
Detailed Description TC74ACT02P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT02P, TC74ACT02F, TC74ACT02FT Quad 2-In...
Datasheet PDF File TC74ACT02P PDF File

TC74ACT02P
TC74ACT02P

Overview
TC74ACT02P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT02P, TC74ACT02F, TC74ACT02FT Quad 2-Input NOR Gate The TC74ACT02 is an advanced high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS.
The inputs are compatible with TTL, NMOS and CMOS output voltage levels.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 4.
6 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • Compatible with TTL outputs: VIL = 0.
8 V (max) VIH = 2.
0 V (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL • Pin and function compatible with 74F02 TC74ACT02P TC74ACT02F TC74ACT02FT Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A TSSOP14-P-0044-0.
65A : 0.
96 g (typ.
) : 0.
18 g (typ.
) : 0.
06 g (typ.
) Start of commercial production 1988-10 1 2014-03-01 Pin Assignment TC74ACT02P/F/FT IEC Logic Symbol 1Y 1 1A 2 1B 3 2Y 4 2A 5 2B 6 GND 7 (top view) Truth Table A B Y L L H L H L H L L H H L 14 VCC 13 4Y 12 4B 11 4A 10 3Y 9 3B 8 3A 1A (2) >1 1B (3) 2A (5) 2B (6) 3A (8) 3B (9) 4A (11) 4B (12) (1) 1Y (4) 2Y (10) 3Y (13) 4Y Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7.
0 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW −65 to 150 °C Note 1: Excee...


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