Insulated Gate Bipolar Transistor
Description
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PD- 94240A
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 1200V VCE(on) typ. = 3.12V
Features
Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) ...
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