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M53230800CW0

Samsung Semiconductor
Part Number M53230800CW0
Manufacturer Samsung Semiconductor
Description (M532308x0CB0/CW0) DRAM Module
Published Sep 3, 2006
Detailed Description www.DataSheet4U.com DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refres...
Datasheet PDF File M53230800CW0 PDF File

M53230800CW0
M53230800CW0

Overview
www.
DataSheet4U.
com DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module.
The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate.
A 0.
1 or 0.
22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
The M5323080(1)0C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
M53230800CW0/CB0 M53230810CW0/CB0 FEATURES • Part Identification - M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold) • Extended Data Out • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • TTL compatible inputs and outputs • Singl...


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