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TRW53601

Part Number	TRW53601
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Sep 7, 2006
Detailed Description	www.DataSheet4U.com TRW53601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW53601 is Designed for General Pur...
Datasheet	TRW53601 PDF File

Overview

www.
DataSheet4U.
com TRW53601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.
3 GHz.
PACKAGE STYLE FEATURES: • Diffused Ballast Resistors • Omnigold™ Metalization System • Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.
0 W @ TC = 25 °C -65 °C to +200 °C DataSheet4U.
com DataShee -65 °C to +200 °C 31 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO hFE COB PO IMD GP VSWR IC = 10 mA IC = 10 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 20 50 45 3.
5 0.
25 UNITS V V V V mA --pF W dB dB IC = 1.
0 mA IE = 250 µA VCB = 28 V VCE = 5.
0 V...

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TRW53601 NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

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