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HFP740

Part Number	HFP740
Manufacturer	Shantou Huashan Electronic
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Sep 12, 2006
Detailed Description	www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HFP740 N-Channel Enhancement Mode Field Effect Transi...
Datasheet	HFP740 PDF File

Overview

www.
DataSheet4U.
com Shantou Huashan Electronic Devices Co.
,Ltd.
HFP740 N-Channel Enhancement Mode Field Effect Transistor █ General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
TO-220 1- G 2-D 3-S █ Features • 10A, 400V, RDS(on) <0.
55Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF740 █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ...

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