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IRHNA9160

International Rectifier
Part Number IRHNA9160
Manufacturer International Rectifier
Description P-CHANNEL TRANSISTOR
Published Oct 15, 2006
Detailed Description www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1433 REPETITIVE AVALANC...
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IRHNA9160
IRHNA9160

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PD-9.
1433 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA9160 P-CHANNEL HEXFET ® TRANSISTOR RAD HARD -100Volt, 0.
087Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of ...


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