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IRHNJ57Z30

International Rectifier
Part Number IRHNJ57Z30
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Oct 15, 2006
Detailed Description www.DataSheet4U.com PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Ra...
Datasheet PDF File IRHNJ57Z30 PDF File

IRHNJ57Z30
IRHNJ57Z30

Overview
www.
DataSheet4U.
com PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.
5) Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 IRHNJ54Z30 300K Rads (Si) 600K Rads (Si) RDS(on) 0.
020Ω 0.
020Ω 0.
020Ω 0.
025Ω ID 22A* 22A* 22A* 22A* IRHNJ57Z30 30V, N-CHANNEL 4 # TECHNOLOGY c IRHNJ58Z30 1000K Rads (Si) SMD-0.
5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such a...


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