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FDFMA3N109

Fairchild Semiconductor
Part Number FDFMA3N109
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published Oct 19, 2006
Detailed Description July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is des...
Datasheet PDF File FDFMA3N109 PDF File

FDFMA3N109
FDFMA3N109

Overview
July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.
It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features MOSFET: • 2.
9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.
5 V RDS(ON) = 140 mΩ @ VG...


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