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FDFMC2P120

Fairchild Semiconductor
Part Number FDFMC2P120
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published Oct 19, 2006
Detailed Description www.DataSheet4U.com FDFMC2P120 July 2005 FDFMC2P120 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Gener...
Datasheet PDF File FDFMC2P120 PDF File

FDFMC2P120
FDFMC2P120

Overview
www.
DataSheet4U.
com FDFMC2P120 July 2005 FDFMC2P120 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.
This device is designed specifically as a single package solution for Buck Boost.
It features a fast switching, low gate charge MOSFET with very low on-state resistance.
Applications • Buck Boost Features • –2 A, –20 V RDS(ON) = 125 mΩ @ VGS = –4.
5 V RDS(ON) = 200 mΩ @ VGS = –2.
5 V • Low Profile – 0.
8mm maximum – in the new package MicroFET 3x3 mm PIN 1 2 3 TO BOTTOM NC 1 2 6 5 A A S 6 TOP 5 4 S 3 4 G BOTTOM MLP 3x3 Absolute Maximum Ratings Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Power Dissipation (Steady State) (Note 1a) Ratings –20 ±12 –3.
5 –10 20 2 2.
4 1.
2 –55 to +150 Units V V A V A W °C (Note a) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 60 145 °C/W Package Marking and Ordering Information Device Marking 2P120 Device FDFMC2P120 Reel Size 7’’ Tape width 12mm Quantity 3000 units ©2005 Fairchild Semiconductor Corporation FDFMC2P120 Rev.
E (W) DataSheet 4 U .
com www.
DataSheet4U.
com FDFMC2P120 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, (Note 2) Test Conditions VGS = 0 V, ID = –250 µA Min –20 Typ Max Units V Off Characteristics ID = –250 µA, Referenced to 25°C VDS ...


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