DatasheetsPDF.com

T620-600W

ST Microelectronics
Part Number T620-600W
Manufacturer ST Microelectronics
Description SNUBBERLESS TRIAC
Published Oct 26, 2006
Detailed Description www.DataSheet4U.com ® T620-600W T630-600W SNUBBERLESS TRIAC FEATURES s s s s s ITRMS = 6A VDRM = VRRM = 600V EXC...
Datasheet PDF File T620-600W PDF File

T620-600W
T620-600W

Overview
www.
DataSheet4U.
com ® T620-600W T630-600W SNUBBERLESS TRIAC FEATURES s s s s s ITRMS = 6A VDRM = VRRM = 600V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.
L.
RECOGNIZED : E81734 A2 A1 G DESCRIPTION The T620-600W and T630-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads.
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Parameter Tc= 100°C tp = 16.
7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.
5 mm from case Value 6 66 75 28 20 100 - 40 to + 150 - 40 to + 125 260 °C °C A2s A/µs Unit A A G A1 A2 ISOWATT220AB (Plastic) Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C Value 600 Unit V September 2001 - Ed: 1A 1/5 DataSheet 4 U .
com www.
DataSheet4U.
com T620-600W / T630-600W THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.
C (360° conduction angle) Parameter Value 50 3.
4 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.
3kΩ VD=VDRM IG = 500mA dlG/dt= 3Aµs IT= 100mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 3.
3 A/ms note) (see Tj= 125°C ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)