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IRF9Z24NPBF

Part Number	IRF9Z24NPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Nov 6, 2006
Detailed Description	www.DataSheet4U.com PD - 94982 IRF9Z24NPbF • Lead-Free www.irf.com 1 02/05/04 www.DataSheet4U.com IRF9Z24NPbF 2 ...
Datasheet	IRF9Z24NPBF PDF File

Overview

www.
DataSheet4U.
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irf.
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DataSheet4U.
com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit D.
U.
T * + + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.
U.
T.
- Device Under Test + VDD * Reverse Polarity of D.
U.
T for P-Channel Driver Gate Drive P.
W.
Period D= P.
W.
Period [VGS=10V ] *** D.
U.
T.
ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.
U.
T.
VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ] *** VGS = 5.
0V for Logic Level ...

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IRF9Z24NPBF HEXFET Power MOSFET - International Rectifier

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