HEXFET Power MOSFET
Description
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PD - 9.1320B
IRLI3803
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
D
VDSS = 30V RDS(on) = 0.006Ω
G
ID = 76A
S
Fifth Generation HEXFETs from Intern...
International Rectifier
IRLI3803 PDF File
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