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PBSS8110T

NXP
Part Number PBSS8110T
Manufacturer NXP
Description NPN low VCEsat (BISS) transistor
Published Nov 17, 2006
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BI...
Datasheet PDF File PBSS8110T PDF File

PBSS8110T
PBSS8110T

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor FEATURES • SOT23 package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements.
APPLICATIONS • Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial • Power management – DC/DC converters – Supply line switching – Battery charger – LCD...


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