Emitter Switched Bipolar Transistor
Description
STC04IE170HV
Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω
Features
VCS(ON) IC RCS(ON)
0.7 V
4 A 0.17 Ω
■ High voltage / high current cascode configuration
■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz ■ Squared RBSOA: up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time
App...
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