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FDD8447L

Fairchild Semiconductor
Part Number FDD8447L
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Nov 20, 2006
Detailed Description FDD8447L 40V N-Channel PowerTrench® MOSFET March 2015 FDD8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Fea...
Datasheet PDF File FDD8447L PDF File

FDD8447L
FDD8447L

Overview
FDD8447L 40V N-Channel PowerTrench® MOSFET March 2015 FDD8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.
5mΩ Features General Description „ Max rDS(on) = 8.
5mΩ at VGS = 10V, ID = 14A „ Max rDS(on) = 11.
0mΩ at VGS = 4.
5V, ID = 11A „ Fast Switching „ RoHS Compliant This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Applications „ Inverter „ Power Supplies D D G S DT O- P-2A5K2 (T O -25 2) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID IS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Max Pulse Diode Current Drain-Source Avalanche Energy Power Dissipation TC= 25°C TA= 25°C TA= 25°C Operating and Storage Junction Temperature Range TC= 25°C TC= 25°C TA= 25°C Thermal Characteristics G (Note 1a) (Note 3) (Note 1a) (Note 1b) S Ratings 40 ±20 50 57 15.
2 100 100 153 44 3.
1 1.
3 -55 to +150 Units V V A A mJ W °C RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.
8 (Note 1a) 40 (Note 1b) 96 °C/W Device Marking FDD8447L Device FDD8447L Package D-PAK(TO-252) Reel Size 13’’ Tape Width 16mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation 1 FDD8447L Rev.
1.
2 www.
fairchildsemi.
com FDD8447L 40V N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V 40 V ID = 250µA, referenced to 25°C ...


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