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IRGB4056DPBF

International Rectifier
Part Number IRGB4056DPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Nov 22, 2006
Detailed Description PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT T...
Datasheet PDF File IRGB4056DPBF PDF File

IRGB4056DPBF
IRGB4056DPBF

Overview
PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel IRGB4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ.
= 1.
55V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged ...


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