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IRGP4062DPBF

Part Number	IRGP4062DPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Nov 22, 2006
Detailed Description	IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Feature...
Datasheet	IRGP4062DPBF PDF File

Overview

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode E n-channel • Tight parameter distribution • Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
65V CC Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI E GC TO-220AB IRGB4062DPbF G Gate E GC E GC TO-247AC TO-247AD IRGP4062DPbF IRGP4062D-EPbF C Collector E Emitter Absolute Maximum Ratings Pa ra m e te r V CES IC @ TC = 25°C IC @ TC = 100°C ICM IL M IF @ TC = 25°C IF @ TC = 100°C IFM V GE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current eDiode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TST G Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw Thermal Resistance Pa ra m e te r R JC (IGBT) R JC (Diode) R JC (IGBT) R JC (Diode) R CS R JA Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB Thermal Resistance Junction-to-Case-(each Diode) TO-220AB Thermal Resistance Junction-to-Case-(each IGBT) TO-247 Thermal Resistance Junction-to-Case-(each Diode) TO-247 Thermal Resistance, Case-to-Sink (flat, greased surface) Therm...

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IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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