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IRL1404

International Rectifier
Part Number IRL1404
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Nov 22, 2006
Detailed Description www.DataSheet4U.com PD - 93854B IRL1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Res...
Datasheet PDF File IRL1404 PDF File

IRL1404
IRL1404

Overview
www.
DataSheet4U.
com PD - 93854B IRL1404 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V G S RDS(on) = 4.
0mΩ ID = 160A† Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
160† 110† 640 200 1.
3 ± 20 620 95 20 5.
0 -55 to + 175 300 (1.
6mm from case) 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted)‡ Typ.
––– 0.
50 ––– Max.
0.
75 ––– 62 Units °C/W www.
irf.
com 1 06/14/04 IRL1404 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source...


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