SILICON ABRUPT VARACTOR DIODE
Description
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AT12016-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21 FEATURES INCLUDE:
High Quality Factor, Q = 300 MIN. CP = .20 pF Hermetic Pkg, LS = .42 nH
High Tuning Ratio, ∆CT = 9.0 MIN.
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