DatasheetsPDF.com

AT12017-21

Advanced Semiconductor
Part Number AT12017-21
Manufacturer Advanced Semiconductor
Description SILICON ABRUPT VARACTOR DIODE
Published Nov 27, 2006
Detailed Description www.DataSheet4U.com AT12017-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12017-21 is Designed for High Perform...
Datasheet PDF File AT12017-21 PDF File

AT12017-21
AT12017-21

Overview
www.
DataSheet4U.
com AT12017-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12017-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21 FEATURES INCLUDE: • High Tuning Ratio, ∆CT = 9.
5 MIN.
• High Quality Factor, Q = 300 MIN.
• Hermetic Package, CP = .
20 pF LS = .
42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.
75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O NONE TEST CONDITIONS MINIMUM TYPICAL 120 MAXIM 1.
0 100 UNITS V V µA pF ----- f = 1.
0 MHz f = 1.
0 MHz f = 50 MHz f = 2400 MHz 20 9.
0 300 22 24 0.
9 Ω A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)