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SI6866BDQ

Vishay Siliconix
Part Number SI6866BDQ
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Nov 27, 2006
Detailed Description www.DataSheet4U.com SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • N...
Datasheet PDF File SI6866BDQ PDF File

SI6866BDQ
SI6866BDQ

Overview
www.
DataSheet4U.
com SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact...


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