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SI6866DQ

Vishay Siliconix
Part Number SI6866DQ
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Nov 27, 2006
Detailed Description www.DataSheet4U.com Si6866DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET FEATURES ID (A) "5.8 "5.0 PRODUCT SUM...
Datasheet PDF File SI6866DQ PDF File

SI6866DQ
SI6866DQ

Overview
www.
DataSheet4U.
com Si6866DQ Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET FEATURES ID (A) "5.
8 "5.
0 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.
030 @ VGS = 4.
5 V 0.
040 @ VGS = 2.
5 V D TrenchFETr Power MOSFET D 2.
5-V Rated D Lead (Pb)-Free Version is RoHS Compliant Available D1 D2 TSSOP-8 S1 G1 S2 G2 1 2 3 4 Top View D 8 D 7 D 6 D 5 D G1 G2 Si6866DQ S1 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information: Si6866DQ-T1 Si6866DQ-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 "5.
8 "4.
7 "30 1.
5 1.
67 1.
06 Steady State Unit V "5.
0 "4.
0 A 1.
1 1.
2 0.
76 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71102 S-50695—Rev.
B, 18-Apr-05 www.
vishay.
com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 60 86 38 Maximum 75 105 45 Unit _C/W 1 Si6866DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.
5 V VGS = 4.
5 V, ID = 5.
8 A VGS = 2.
5 V, ID = 5.
0 A VDS = 10 V, ID = 5.
8 A IS = 1.
5 A, VGS = 0 V 30 0.
023 0.
033 18 0.
75 1.
1 0.
030 0.
040 0.
6 1.
5 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge...


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