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EDI8L21664V

EDI
Part Number EDI8L21664V
Manufacturer EDI
Description External SRAM Memory Solution
Published Nov 30, 2006
Detailed Description www.DataSheet4U.com EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features DSP Memory Solution •...
Datasheet PDF File EDI8L21664V PDF File

EDI8L21664V
EDI8L21664V

Overview
www.
DataSheet4U.
com EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features DSP Memory Solution • Texas Instruments TMS320C54x 3.
3V Operating Supply Voltage Access Times of 10, 12 and 15ns Single Write Control and Output Enable Lines One Chip Enable Line per Memory Bank 50% Space Savings vs.
Monolithic TSOPs Upgrade Path Available in Same Footprint Multiple VCC and VSS Pins Reduced Inductance and Capacitance 74 pin BGA, JEDEC MO-151 The EDI8L21664VxxBC is a 3.
3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate.
The device is packaged in a 74 lead, 15mm by 15mm, BGA.
Operating with a 3.
3V power supply and with access times as fast as 10ns, the device allows the user to develop a fast external memory for Texas Instuments' TMS320C54x DSP.
The device consists of two separate banks of 64Kx16 of memory.
Each bank has a separate Chip Enable pin and higher order address select pin.
Bank 'A' is controlled using CE1\ and A15A.
Bank ...


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