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IRLR3110ZPBF

International Rectifier

Power MOSFET


Description
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional featur...



International Rectifier

IRLR3110ZPBF

PDF File IRLR3110ZPBF PDF File


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