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FDA16N50
N-Channel MOSFET
Description
FDA16N50 500V N-Channel MOSFET FDA16N50 500V N-Channel MOSFET Features 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V Low gate charge ( typical 32 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability April 2007 UniFETTM Description These N-Channel enhancement mode power field effect
transistor
s are produced usi...
Fairchild Semiconductor
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