DatasheetsPDF.com

FSB50325

Fairchild Semiconductor
Part Number FSB50325
Manufacturer Fairchild Semiconductor
Description Smart Power-Module
Published Dec 21, 2006
Detailed Description FSB50325 Smart Power Module (SPM®) April 2007 FSB50325 Smart Power Module (SPM®) Features • 250V 3.0A 3-phase FRFET i...
Datasheet PDF File FSB50325 PDF File

FSB50325
FSB50325

Overview
FSB50325 Smart Power Module (SPM®) April 2007 FSB50325 Smart Power Module (SPM®) Features • 250V 3.
0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications • HVIC for gate driving and undervoltage protection • 3/5V CMOS/TTL compatible, active-high interface • Optimized for low electromagnetic interference • Isolation voltage rating of 1500Vrms for 1min.
General Description FSB50325 is a tiny smart power module (SPM®) based on FRFET technology as a compact inverter solution for small power motor drive applications such as fan motors and water suppliers.
It is composed of 6 fast-recovery MOSFET (FRFET), and 3 half-bridge HVICs for FRFET gate driving.
FSB50325 provides low electromagnetic interference (EMI) characteristics with optimized switching speed.
Moreover, since it employs FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based power module or one-chip solution.
The package is optimized for the thermal performance and compactness for the use in the built-in motor application and any other application where the assembly space is concerned.
FSB50325 is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference.
Absolute Maximum Ratings Symbol VPN ID25 ID80 IDP PD VCC VBS VIN TJ TSTG RθJC VISO Parameter DC Link Input Voltage, Drain-source Voltage of each FRFET Each FRFET Drain Current, Continuous Each FRFET Drain Current, Continuous Each FRFET Drain Current, Peak Maximum Power Dissipation Control Supply Voltage High-side Bias Voltage Input Signal Voltage Operating Junction Temperature Storage Temperature Junction to Case Thermal Resistance Isolation Voltage Conditions Rating 250 TC = 25°C TC = 80°C TC = 25°C, PW < 100μs TC = 80°C, Each FRFET Applied between VCC and COM Applied between VB and VS Applied between IN and COM 1.
5 1.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)