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SI6933DQ

Part Number	SI6933DQ
Manufacturer	Vishay Siliconix
Description	Dual P-Channel Enhancement-Mode MOSFET
Published	Dec 25, 2006
Detailed Description	www.DataSheet4U.com SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTIC...
Datasheet	SI6933DQ PDF File

Overview

www.
DataSheet4U.
com SPICE Device Model Si6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit mode is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-10V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 71734 12-Oct-01 www.
vishay.
com 1 SPICE Device Model Si6933DQ Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 2.
13 132 0.
034 0.
054 9.
6 - 0.
78 Measured Data Unit VGS(th) ID(on) a VDS = VGS, ID = − 250µA VDS > − 5V, VGS = − 10V VGS = − 10V, ID = − 3.
5A VGS = − 4.
5V, ID = − 2.
5A VDS = − 15V, ID = − 3.
5A IS = − 1.
25A, VGS = 0V V A 0.
035 0.
062 7.
2 - 0.
77 Ω S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltagea a rDS(on) gfs VSD Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn...

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SI6933DQ Dual P-Channel Enhancement-Mode MOSFET - Vishay Siliconix

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