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TC2571

Transcom
Part Number TC2571
Manufacturer Transcom
Description PHEMT GaAs Power FETs
Published Dec 25, 2006
Detailed Description www.DataSheet4U.com TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W T...
Datasheet PDF File TC2571 PDF File

TC2571
TC2571

Overview
www.
DataSheet4U.
com TC2571 REV.
2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.
35 µm, Wg = 2.
4 mm 100 % DC Tested Low Cost Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip.
The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package.
All devices are 100%...


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